Design of a novel 12T radiation hardened memory cell tolerant to single event upsets (SEU)

摘要

A novel radiation hardened 12T memory cell (RH-12T) is proposed to address single event upset (SEU) problems in 65nm CMOS technology. It eliminates the possibility of a sensitive “0” storage node upset by surrounding the output nodes with NMOS, realizing a full resistance for any single node upset. Furthermore, less sensitive node pairs are obtained in circuit design compared to the DICE cell, which reduces the sensitivity to single event multiple-node upsets (SE-MNU). Hspice simulation shows that it has an excellent performance considering read and write access time with an acceptable SNM. Circuit-SEU simulation demonstrates that it is not only immune to upsets any single sensitive node, but also tolerant to multiple node upset on specific nodes with sharing charge of 100fC.