Enabling manufacturing of sub-10nm generations of integrated circuits with EUV lithography

摘要

A throughput of >140 wph at a dose of 20 mJ/cm ² has been achieved on our NXE:3400B EUV exposure systems with much reduced rate of source power degradation. Improvement in mask-area cleanliness has resulted in over 2,000 exposures per fall-on particle and progress on the pellicle has resulted in an EUV transmission of 83% at high source power. NXE:3400C will be available in 2019 with a throughput of >155 wph and tighter overlay specifications to further enhance EUV productivity and capability. Additionally, development of a 0.55 NA EUV exposure system has started to enable continued scaling in semiconductor manufacturing.