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EUV MASK SET AND METHODS OF MANUFACTURING EUV MASKS AND INTEGRATED CIRCUITS

机译:EUV面罩组以及制造EUV面罩和集成电路的方法

摘要

An EUV mask set and method of manufacturing is disclosed. In one embodiment, a set of EUV mask blanks is inspected to obtain information about defects in each of the EUV mask blanks. From the obtained information, a set of complementary functional portions is determined, wherein each functional portion is assigned to one of the EUV mask blanks and does not contain any of the defects. The functional portions of the EUV mask blanks of the EUV mask blank set complement one another to form a virtual image area corresponding in size to image areas of the EUV mask blanks. A predefined mask pattern is provided on the EUV mask blanks. Information identifying position and shape of the functional portions is used to control an illumination process for imaging the predefined mask pattern onto a target.
机译:公开了一种EUV掩模组和制造方法。在一个实施例中,检查一组EUV掩模坯料以获得关于每个EUV掩模坯料中的缺陷的信息。根据获得的信息,确定一组互补的功能部分,其中,每个功能部分都分配给一个EUV掩模毛坯,并且不包含任何缺陷。 EUV掩模坯料组的EUV掩模坯料的功能部分彼此互补,以形成大小与EUV掩模坯料的图像区域相对应的虚像区域。在EUV掩模毛坯上提供了预定义的掩模图案。识别功能部分的位置和形状的信息用于控制用于将预定掩模图案成像到目标上的照明过程。

著录项

  • 公开/公告号US2014106263A1

    专利类型

  • 公开/公告日2014-04-17

    原文格式PDF

  • 申请/专利权人 ADVANCED MASK TECHNOLOGY CENTER GMBH & CO.;

    申请/专利号US201213652987

  • 发明设计人 CLEMENS UTZNY;

    申请日2012-10-16

  • 分类号G03F1/22;G03F7/20;

  • 国家 US

  • 入库时间 2022-08-21 16:08:05

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