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Novel EUV mask absorber evaluation in support of next-generation EUV imaging

机译：新型EUV面罩吸收器评估支持下一代EUV成像

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Christophe Detavernier; Vicky Philipsen; Vu Luong; Karl Opsomer; Andreas Erdmann; Peter Evanschitzky; Frank Scholze; Christian Laubis; Robbert W. E. van de Kruijs; Zahra Heidarnia-Fathabad; Eric Hendrickx;
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1. Development of an EUV Microscope with Focused Coherent EUV Based on Coherent Diffraction Imaging Method for Defect Evaluation on an EUV Mask [J] . TETSUO HARADA, HIRAKU HASHIMOTO, TAKEO WATANABE Electronics and communications in Japan . 2018,第3期

机译：基于相干衍射成像方法聚焦EUV聚焦的EUV显微镜的EUV掩模缺陷评估
2. Detection of Printable EUV Mask Absorber Defects and Defect Adders by Full Chip Optical Inspection of EUV Patterned Wafers [J] . Luciana Meli, Ravi Bonam, Scott Halle, IEEE Transactions on Semiconductor Manufacturing . 2017,第4期

机译：通过EUV图案晶圆的全芯片光学检测来检测可印刷的EUV掩模吸收层缺陷和缺陷添加物
3. Evaluation of EUV mask impacts on wafer line-width roughness using aerial and SEM image analyses [J] . Xuemei Chen, Erik Verduijn, Obert Wood, Journal of microanolithography, MEMS, and MOEMS . 2018,第4期

机译：使用航空和SEM图像分析评估EUV掩模对晶圆线宽粗糙度的影响
4. Novel EUV mask absorber evaluation in support of next-generation EUV imaging [C] . Vicky Philipsen, Kim Vu Luong, Karl Opsomer, Conference on photomask technology . 2018

机译：新型EUV掩模吸收剂评估，可支持下一代EUV成像
5. Key Challenges in EUV Mask Technology: Actinic Mask Inspection and Mask 3D Effects. [D] . Wang, Yow-Gwo. 2017

机译：EUV掩模技术的主要挑战：光化掩模检测和掩模3D效果。
6. Physico-Chemical Surface Modifications of Polyetheretherketone (PEEK) Using Extreme Ultraviolet (EUV) Radiation and EUV-Induced Nitrogen Plasma [O] . Joanna Czwartos, Bogusław Budner, Andrzej Bartnik, 2020

机译：使用极端紫外（EUV）辐射和EUV诱导的氮等离子体的聚醚醚酮（PEEK）的物理化学表面改性
7. EUV actinic imaging tool aerial image evaluation of EUVL embedded phase shift mask performance [O] . Pei-Yang Yan, Iacopo Mochi, Ken Goldberg 2012

机译：EUV浮雕成像工具euvl嵌入式相移掩模性能的空中图像评估

Novel EUV mask absorber evaluation in support of next-generation EUV imaging

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