首页> 外文会议>Electronic Components Technology Conference, 1998. 48th IEEE >Moisture-induced interfacial delamination growth in plastic IC packages during solder reflow
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Moisture-induced interfacial delamination growth in plastic IC packages during solder reflow

机译:焊料回流期间塑料IC封装中水分引起的界面分层增加

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摘要

Very small defects may exist at interfaces in IC packages due to random factors, manufacturing faults or contamination. During solder reflow, these defects give rise to stress concentrations due to thermal mismatch between the materials forming the interface and to the development of hygrostresses from moisture absorption in the plastic encapsulant. In this paper, the mechanics of interfacial delamination will be discussed and a methodology presented for analysing moisture-induced delamination growth during solder reflow. This paper also describes an experimental study which verified the methodology. In this experimental study, plastic packages which were fabricated with a known internal delamination, were divided into 3 groups and subjected to 3 different levels of moisture preconditioning, namely fully dry, 85/spl deg/C/60%RH and 85/spl deg/C/85%RH. Packages from each group were then subjected to oven temperatures varying from 180/spl deg/C to 230/spl deg/C in increments of 5/spl deg/C. Examining the specimens using a scanning acoustic microscope, the temperature at which delamination propagation occurred was determined and compared with that predicted using mixed-mode interfacial delamination mechanics. Generally good agreement was obtained. The growth of the delamination could be explained in terms of the variation of hygrothermal stress intensity factor and interface toughness with crack length.
机译:由于随机因素,制造故障或污染,IC封装的接口处可能存在非常小的缺陷。在焊料回流期间,由于形成界面的材料之间的热失配以及由于塑料密封剂中的水分吸收而产生的湿润应力,这些缺陷会引起应力集中。在本文中,将讨论界面分层的机理,并提出一种用于分析焊料回流期间水分引起的分层增长的方法。本文还描述了验证该方法的实验研究。在该实验研究中,将具有已知内部分层的塑料包装分为3组,并进行3种不同水平的湿气预处理,即完全干燥,85 / spl deg / C / 60%RH和85 / spl deg / C / 85%RH。然后将每组包装的烤箱温度从180 / spl deg / C更改为230 / spl deg / C,以5 / spl deg / C的增量变化。使用扫描声显微镜检查样品,确定发生分层传播的温度,并将其与使用混合模式界面分层力学预测的温度进行比较。通常获得良好的协议。分层的增长可以用湿热应力强度因子和界面韧性随裂纹长度的变化来解释。

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