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Moisture-induced interfacial delamination growth in plastic IC packages during solder reflow

机译:焊料回流期间塑料IC包装中的湿气诱导的界面分层生长

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摘要

Very small defects may exist at interfaces in IC packages due to random factors, manufacturing faults or contamination. During solder reflow, these defects give rise to stress concentrations due to thermal mismatch between the materials forming the interface and to the development of hygrostresses from moisture absorption in the plastic encapsulant. In this paper, the mechanics of interfacial delamination will be discussed and a methodology presented for analysing moisture-induced delamination growth during solder reflow. This paper also describes an experimental study which verified the methodology. In this experimental study, plastic packages which were fabricated with a known internal delamination, were divided into 3 groups and subjected to 3 different levels of moisture preconditioning, namely fully dry, 85/spl deg/C/60%RH and 85/spl deg/C/85%RH. Packages from each group were then subjected to oven temperatures varying from 180/spl deg/C to 230/spl deg/C in increments of 5/spl deg/C. Examining the specimens using a scanning acoustic microscope, the temperature at which delamination propagation occurred was determined and compared with that predicted using mixed-mode interfacial delamination mechanics. Generally good agreement was obtained. The growth of the delamination could be explained in terms of the variation of hygrothermal stress intensity factor and interface toughness with crack length.
机译:由于随机因素,制造故障或污染,IC包中的接口可能存在非常小的缺陷。在焊料回流期间,由于形成界面的材料与塑料密封剂中的吸湿性的湿速度的发展,这些缺陷导致应力浓度引起应力浓度。本文将讨论界面分层的机制,并提出了一种用于分析焊料回流期间的水分诱导的分层生长的方法。本文还描述了一种验证方法的实验研究。在该实验研究中,用已知的内部分层制造的塑料包装分为3组,并进行3种不同水分的水分预处理,即完全干燥,85 / SPL DEG / C / 60%RH和85 / SPL DEG / C / 85%RH。然后以5 / SPL DEG / C的增量,从180 / SPL DEG / C至230 / SPL DEG / C的烘箱温度下进行烘箱温度。使用扫描声学显微镜检查试样,测定发生分层传播的温度并与使用混合模式界面分层力学预测的温度进行比较。一般来说,获得了良好的协议。分层的生长可以根据湿热应力强度因子的变化和裂缝长度的界面韧性来解释。

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