Ageing of Laser Crystallized and Unhydrogenated Polysilicon Thin Film Transistors

摘要

Ageing of low temperature polysilicon Thin Film Transistors (TFTs) is reported in this study. The active layer of these high performances transistors is amorphous deposited using Low Pressure Chemical Vapor Deposition (LPCVD) technique and then laser crystallized usign a single shot ECL (SSECL of SOPRA) with very large excimer laser. The drian and source regions are in-situ doped during the LPCVD deposition by using phosphine or diborane to fabricate n-type or p-type transistors respectively.