Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization

摘要

High-mobility low-temperature (≤600 deg. C) unhydrogenated in situ doped polysilicon thin film transistors (TFTs) are made. Polysilicon layers are grown by a low pressure chemical vapour deposition (LPCVD) technique and crystallized in a vacuum by thermal annealing. The source and drain regions are in situ doped. The gate insulator is made of an atmospheric pressure chemical vapour deposition (APCVD) silicon dioxide. Hydrogen passivation is not performed on the transistors.