首页> 外国专利> LASER IRRADIATION APPARATUS FOR CRYSTALLIZATION AND MANUFACTURING METHOD FOR POLYSILICON THIN FILM TRANSISTOR USING THE APPARATUS

LASER IRRADIATION APPARATUS FOR CRYSTALLIZATION AND MANUFACTURING METHOD FOR POLYSILICON THIN FILM TRANSISTOR USING THE APPARATUS

机译:用于结晶化的激光辐照装置以及使用该装置制造多晶硅薄膜晶体管的方法

摘要

A laser beam irradiation apparatus according to an embodiment of the present invention is a laser beam irradiation apparatus for irradiating a laser beam by oscillating a frequency in a thin film of amorphous silicon formed on an insulating substrate, a laser oscillating a laser beam constantly generating a laser beam while performing a transmission lens, the polycrystalline process for deriving the integration of a thin film was irradiated with ultraviolet rays on a thin film includes a UV irradiation unit for performing the annealing.
机译:根据本发明实施例的激光束照射设备是一种激光束照射设备,其通过使在绝缘基板上形成的非晶硅薄膜中的频率振荡来照射激光束,激光使激光束不断地产生激光。在执行透射透镜的同时,如果将激光束照射在薄膜上,则在薄膜上用紫外线照射用于使薄膜一体化的多晶工艺包括用于进行退火的UV照射单元。

著录项

  • 公开/公告号KR20050052764A

    专利类型

  • 公开/公告日2005-06-07

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20030086309

  • 发明设计人 KIM DONG BYUM;

    申请日2003-12-01

  • 分类号H01L29/786;

  • 国家 KR

  • 入库时间 2022-08-21 22:05:16

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