FIELD-EFFECT TRANSISTOR WITH PLANAR DOPING

摘要

FIELD: electronics. SUBSTANCE: active layer is produced from variband semiconductor which maximum energy of bottom of conductance zone is located on boundary of active layer with substrate diminishing monotonically to surface of active layer. Active layer is manufactured from more than one layer of variband semiconductor. EFFECT: increased steepness and linearity of transition characteristic and of limit amplification frequencies of current and power. 2 cl, 1 dwg