High-Frequency High-Voltage Device and Integrated Circuits R&D Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;
Key Laboratory of Science and Technology on Silicon Devices,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;
University of Chinese Academy of Sciences,Beijing 100049,China;
Department of Chemistry,City University of Hong Kong,Hong Kong 999077,China;
SWCNT FETs; low-energy proton irradiation; radiation effects; electrical performance; TID effect; displacement damage effect; simulation;