An atomic planar-doped field-effect transistor is disclosed, which is featured by a channel region of a limited thickness between source and drain with at least one atomic planar-doped layer formed therein and a barrier layer or layers provided on the upper or lower side or on the both sides of the channel region. The channel region is formed of a semiconductor of a low impurity concentration or of an n-type with the atomic planar-doped layer having high concentration donor impurities or of a p-type with the atomic planar-doped layer having high concentration acceptor impurities. The upper barrier layer is provided between the channel region and a gate electrode and the lower barrier layer, if present, is provided between the channel region and a substrate. They are formed of a semiconductor of a low impurity concentration which is different from the semiconductor of the channel region and makes a heterojunction with the channel region and which has a smaller electron affinity than the semiconductor of the channel region having the donor planar-doped layer or a larger value of a sum of electron affinity and energy gap than the semiconductor of the channel region having the acceptor planar-doped layer. With the upper barrier layer, the transistor of the present invention has a large gate-forward turn-on voltage. The short channel effects are suppressed by adding the lower barrier layer to the transistor.
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