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Monolithically Integrated Planar Front-End Photoreceivers with 0.25 MicrometerGate Pseudomorphic In(0.60)Ga(0.40)As/In(0.52)Al(0.48)As/InP Modulation-Doped Field-Effect Transistors

机译：具有0.25微米栅极假晶入（0.60）Ga（0.40）as / In（0.52）al（0.48）as / Inp调制掺杂场效应晶体管的单片集成平面前端光接收器

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Lai, R.; Bhattacharya, P. K.; Pavlidis, D.; Brock, T.;
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年度 1991
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总页数 3
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Photodetectors; Photoelectricity; Indium phosphides; Pin diodes; Field effecttransistors; Reprints;

机译：光电探测器;光电;磷化铟; pin二极管;场效应晶体管;重印;

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1. Monolithically integrated planar front-end photoreceivers with 0.25 mu m gate pseudomorphic In/sub 0.60/Ga/sub 0.40/As/In/sub 0.52/Al/sub 0.48/As/InP modulation-doped field-effect transistors [J] . Lai R., Bhattacharya P.K. Electronics Letters . 1991,第4期

机译：具有0.25μm栅极伪晶型In / sub 0.60 / Ga / sub 0.40 / As / In / sub 0.52 / Al / sub 0.48 / As / InP调制掺杂的场效应晶体管的单片集成平面前端光接收器
2. Optical tuning of monolithic In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP modulation-doped field-effect transistor oscillators at X and R band [J] . Lai R., Bhattacharya P.K. Electronics Letters . 1991,第12期

机译：在X和R波段对In / sub 0.53 / Ga / sub 0.47 / As / In / sub 0.52 / Al / sub 0.48 / As / InP调制掺杂的场效应晶体管振荡器进行单片光学调谐
3. Low-frequency noise characteristics of metamorphic In_0.52Al_0.48As/In_0.60Ga_0.40As double-heterostructure Pseudomorphic high electron mobility transistors grown On a GaAs substrate [J] . Jeong Hoon Kim, Hyung-Sup Yoon, Jin-Hee Lee Solid-State Electronics . 2002,第1期

机译：在GaAs衬底上生长的In_0.52Al_0.48As / In_0.60Ga_0.40As双异质结构伪高电子迁移率晶体管的低频噪声特性
4. Monolithically integrated In/sub 0.60/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP photoreceivers with submicron devices [C] . Lai, R., Bhattacharya, Indium Phosphide and Related Materials, 1991., Third International Conference. . 1991

机译：具有亚微米器件的单片集成In / sub 0.60 / Ga / sub 0.47 / As / In / sub 0.52 / Al / sub 0.48 / As / InP光接收器
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers [O] . Piotr Gutowski, Iwona Sankowska, Tomasz Słupiński, 2019

机译：InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
7. The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes [O] . J. Pamulapati, R. Lai, G. I. Ng, 1990

机译：Pseudomorphic IN0.53 + XGA0.47-XAS / IN0.52AL0.48AS（0≤x≤0.32）调制掺杂场效应晶体管的关系与分子束外延生长模式的性能特征
8. Performance Characteristics of In(0.6)Ga(0.4)As/In(0.52)Al(0.48)As Modulation-Doped Field-Effect Transistor Monolithically Integrated with In(0.53)Ga(0.47)As p-i-n Photodiodes [R] . Zebda, Y., Bhattecharya, P. K., Pavlidis, D., 1990

机译：In（0.6）Ga（0.4）as / In（0.52）al（0.48）作为调制掺杂场效应晶体管与In（0.53）Ga（0.47）as p-i-n光电二极管单片集成的性能特征

Monolithically Integrated Planar Front-End Photoreceivers with 0.25 MicrometerGate Pseudomorphic In(0.60)Ga(0.40)As/In(0.52)Al(0.48)As/InP Modulation-Doped Field-Effect Transistors

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