InP / InGaAs monolithic integrated demultiplexed photoreceiver and manufacturing method thereof

摘要

The present invention relates to a monolithic integrated demultiplexing photoreceiver (10) that is formed on a semi-insulating InP substrate(16). A frequency routing device (11) is formed on the substrate and includes a first plurality of InP/InGaAs semiconductor layers. At least one p-i-n photodiode (12) is also formed on the substrate and includes a second plurality of InP/InGaAs semiconductor layers. Additionally, at least one single heterostructure bipolar transistor (18) is formed on the substrate and includes a third plurality of InP/InGaAs semiconductor layers. At least one layer from each of the first, second and third plurality of layers are substantially identical to one another. IMAGE