Optical tuning of monolithic In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP modulation-doped field-effect transistor oscillators at X and R band

摘要

The authors have experimentally studied the optical control and optical tuning characteristics of monolithically integrated In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As modulation-doped field-effect transistor (MODFET) oscillators operating in the X and R bands. For a 20 mu W intrinsic photoexcitation on the device, the maximum frequency shift for the X- and R-band oscillators was 8.7 and 11.7 MHz, respectively.