High speed low-power consumption semiconductor non-volatile memory device

摘要

A current source of a semiconductor read only memory device supplies current through a digit line to a memory cell so as to seen be whether the memory cell is implemented by an enhancement type transistor or a depletion type transistor, and a potential transferring circuit either discharges a precharge level from an input line connected to a sense amplifier or maintains the precharge level depending upon the potential level at the drain node of the memory cell so that a small amount of parasitic capacitance of the input line allows the sense amplifier to rapidly determine the operation mode of the memory cell.