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SEMICONDUCTOR DEVICE, AND VERIFICATION METHOD OF SEMICONDUCTOR TEST DEVICE AND/OR TEST METHOD USING THE SEMICONDUCTOR DEVICE

机译:半导体装置,半导体测试装置的验证方法和/或使用该半导体装置的测试方法

摘要

PROBLEM TO BE SOLVED: To provide a verification method by which verification of a semiconductor test device and/or semiconductor test method can be performed surely, also to provide a semiconductor device for the verification.;SOLUTION: A defective part is provided intentionally in a spare element of the prescribed part in a spare region of a semiconductor device, a semiconductor test device and/or semiconductor test method are verified by whether the defective part can be tested surely or not. First and second spare regions 2, 4 are provided as a spare of a memory array 8, and a defective part is provided intentionally in a memory cell of the prescribed part in the second spare region 4. Switching between a memory cell in the memory cell array 8 and memory cells in the first and the second spare regions 2, 4 is performed by a control circuit 9. Indication of a switching part is indicated to the control circuit 9 by fusing a desired fuse in an LT fuse group 1 corresponding to the first spare region 2 and an LT fuse group 3 corresponding to the second spare region 4.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:提供一种验证方法,通过该方法可以可靠地进行半导体测试装置的验证和/或半导体测试方法,还提供一种用于验证的半导体装置。通过是否能够可靠地测试缺陷部分来验证半导体器件的备用区域中的规定部分的备用元件,半导体测试设备和/或半导体测试方法。提供第一和第二备用区域2、4作为存储阵列8的备用,并且有意地在第二备用区域4中的规定部分的存储单元中提供有缺陷的部分。通过控制电路9来执行第一备用区域2和第二备用区域2、4中的阵列8和存储单元。通过将期望的熔断器熔断在与熔断器组1相对应的LT熔断器组1中来向控制电路9指示切换部分。第一备用区域2和对应于第二备用区域4的LT熔断器组3;版权所有:(C)2003,JPO

著录项

  • 公开/公告号JP2003132695A

    专利类型

  • 公开/公告日2003-05-09

    原文格式PDF

  • 申请/专利权人 MITSUBISHI ELECTRIC CORP;

    申请/专利号JP20010330522

  • 发明设计人 KOYAMA TOSHISATO;

    申请日2001-10-29

  • 分类号G11C29/00;G01R31/28;H01L21/82;

  • 国家 JP

  • 入库时间 2022-08-22 00:12:54

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