INFORMATION WRITE METHOD, INFORMATION READ METHOD, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an information write method for utilizing a transistor as a nonvolatile memory device in order to reduce the number of manufacture processes of a semiconductor device.;SOLUTION: The information write method is for writing information to the semiconductor device including a first transistor 10b provided with a first gate insulating film and a first gate electrode and a second transistor 10b of the same conductivity type as the first transistor provided with a second gate insulating film of the same thickness as the first gate insulating film and a second gate electrode of the same shape as the first gate electrode. By causing the first gate insulating film to catch electrons or holes, reducing the absolute value of the threshold voltage of the first transistor to be over a stipulated value and maintaining the absolute value of the threshold voltage of the second transistor to be less than the stipulated value, 0 is stored in one of the first transistor 10b and the second transistor 10b, 1 is stored in the other and the information is written.;COPYRIGHT: (C)2009,JPO&INPIT