METHOD FOR REDUCING A RESET CURRENT FOR RESETTING A PORTION OF A PHASE CHANGE MATERIAL IN A MEMORY CELL OF A PHASE CHANGE MEMORY DEVICE AND THE PHASE CHANGE MEMORY DEVICE

摘要

Phase change provides a method for reducing a reset current of a memory cell of a memory device. The method includes the conversion of at least a portion of the phase change material including a first crystalline phase as one of the second crystalline phase and the amorphous phase. The second crystal phase transitions in the amorphous phase to the crystal phase easily than the first. For example, the first crystal phase may be a hexagonal close packed structure, and the second crystal phase may be a face-centered cubic structure. ; Phase change, crystalline, amorphous phase, hexagonal close packed, face-centered cubic