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Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device
Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device
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机译:减少用于重置相变存储器件的存储单元中的一部分相变材料的重置电流的方法和相变存储器件
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摘要
According to one embodiment, at least a portion of the phase change material including a first crystalline phase is converted to one of a second crystalline phase and an amorphous phase. The second crystalline phase transitions to the amorphous phase more easily than the first crystalline phase. For example, the first crystalline phase may be a hexagonal closed packed structure, and the first crystalline phase may be a face centered cubic structure.
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