机译:通过在GeSbTe膜中进行碳掺杂来减少相变存储器件中的RESET电流
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea,Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do 445-701, South Korea;
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea;
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea;
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do 445-701, South Korea;
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do 445-701, South Korea;
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do 445-701, South Korea;
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do 445-701, South Korea;
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do 445-701, South Korea;
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do 445-701, South Korea;
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea;
机译:掺铈掺杂GeSbTe薄膜的相变存储器件的特性和热稳定性的改进
机译:用于相变存储的掺杂Si的GeSbTe薄膜的改善的相变特性
机译:基于碳的衬里,用于复位电流减少自加热相位变化存储器单元
机译:碳掺杂的Ge2Sb2Te5相变存储器件,具有减小的RESET电流和功耗
机译:硫族化物薄膜器件中的电结构耦合:光伏和相变存储器
机译:通过等离子体增强原子层沉积法沉积的GeSbTe薄膜的相变特性
机译:基于标准0.13-μmCMOS技术的相变存储器的RESET电流降低