$hbox{1}/f$ Noise in 45-nm RESET-State Phase-Change Memory Devices: Characterization, Impact on Memory Readout Operation, and Scaling Perspectives

摘要

In this letter, we study the low-frequency noise behavior of RESET-state Phase-Change Memory (PCM) devices belonging to a 45-nm technology node. Furthermore, by dealing with a typical case study, we calculate the fluctuation of the cell readout current induced by $hbox{1}/f$ noise and provide predictions for estimating its effect in RESET-state PCM of future technology nodes.