METHOD OF FORMING NI OXIDE LAYER AND METHOD OF MANUFACTURING RESISTIVE RANDOM ACCESS MEMORY DEVICE COMPRISING NI OXIDE LAYER FORMED BY THE SAME

摘要

A method for forming a nickel oxide layer and a method for manufacturing a resistive memory device including the nickel oxide layer are provided to obtain the nickel oxide layer with uniform oxidation state by using CVD or ALD(Atomic Layer Deposition) process. A nickel oxide layer is formed by using a CVD(Chemical Vapor Deposition) method. The source gas including a precursor of Ni is supplied to a reaction chamber(100) on which a substrate is loaded. The reaction gas including oxygen is supplied to the chamber. The precursor of the Ni is the anoxic precursor. The precursor of the Ni in the substrate(120) reacts to the reaction gas(30). The reaction gas decomposes the Ni(EtCp)2 into Ni and (EtCp)2. The (EtCp)2 is volatilized and the Ni is oxidized and is adhered to the upper surface of the substrate. A nickel oxide layer(200) is formed on the substrate. The precursor of the Ni is Ni(EtCp)2. The O2 gas is used as the reaction gas. The temperature of the substrate is 250 to 400 degrees centigrade when forming the nickel oxide layer.