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Effect of Interfacial Top Electrode Layer on the Performance of Niobium Oxide Based Resistive Random Access Memory

机译：界面上电极层对基于氧化铌的电阻型随机存取存储器性能的影响

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作者
Manjunath, Vishal Jain;
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作者单位

University of Cincinnati;

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授予单位 University of Cincinnati;
学科
学位 M.S.
年度 2019
页码 64 p.
总页数 64
原文格式 PDF
正文语种 eng
中图分类
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1. Interfacial Electrode-Driven Enhancement of the Switching Parameters of a Copper Oxide-Based Resistive Random-Access Memory Device [J] . Sangani L. D. Varma, Kumar Ch. Ravi, Krishna M. Ghanashyam Journal of Electronic Materials . 2016,第1期

机译：界面电极驱动的基于氧化铜的电阻型随机存取存储设备的开关参数的增强
2. Flexible resistive random access memory using solution-processed TiOx with Al top electrode on Ag layer-inserted indium-zinc-tin-oxide-coated polyethersulfone substrate [J] . Seungjae Jung, Jaemin Kong, Sunghoon Song, Applied Physics Letters . 2011,第14期

机译：在插入有Ag层的铟锌氧化锡涂层的聚醚砜基板上使用带有Al顶电极的固溶TiOx进行柔性电阻随机存取存储器
3. Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory [J] . Lin Shih-Kai, Wu Cheng-Hsien, Chang Ting-Chang, IEEE Transactions on Electron Devices . 2021,第3期

机译：通过将氧化铟层作为氧离子存储层插入基于HFO 2的电阻随机存取存储器中的氧化铟层来提高性能
4. Electrode/oxide interface engineering by inserting single-layer graphene: Application for HfOx-based resistive random access memory [C] . Chen Hong-Yu, Tian He, Gao Bin, IEEE International Electron Devices Meeting . 2012

机译：通过插入单层石墨烯进行电极/氧化物界面工程：基于HfOx的电阻式随机存取存储器的应用
5. Understanding of Oxide Based Resistive Random Access Memory Devices with Multilevel Resistance States and Application [D] . Chen, Wenbo. 2017

机译：具有多级电阻状态的基于氧化物的电阻式随机存取存储装置的理解和应用
6. Controlling Cu Migration on Resistive Switching ArtificialSynapse and Glucose/Saliva Detection by Using an Optimized AlOx Interfacial Layer in a-COx-Based Conductive Bridge Random Access Memory [O] . Sreekanth Ginnaram, Jiantai Timothy Qiu, Siddheswar Maikap 2020

机译：人工控制电阻迁移中的铜迁移通过在基于a-COx的导电桥随机访问存储器中使用优化的AlOx界面层来进行突触和葡萄糖/唾液检测
7. Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devices [O] . Sung Pyo Park, Doo Hyun Yoon, Young Jun Tak, 2015

机译：通过相氧化氢在均匀和多层GAZNOX基电阻随机存取存储器件中的通过相转变高度可靠的切换
8. Effect of Atomic Layer Depositions (ALD)-Deposited Titanium Oxide (TiO2) Thickness on the Performance of Zr40Cu35Al15Ni10 (ZCAN)/TiO2/Indium (In)-Based Resistive Random Access Memory (RRAM) Structures. [R] . Chin, M. L., Amani, M., O'Regan, T. P., 2015

机译：原子层沉积（aLD） - 沉积二氧化钛（TiO2）厚度对Zr40Cu35al15Ni10（ZCaN）/ TiO2 /铟（In）基电阻随机存取存储器（RRam）结构性能的影响。

Effect of Interfacial Top Electrode Layer on the Performance of Niobium Oxide Based Resistive Random Access Memory

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