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Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devices

机译：通过相氧化氢在均匀和多层GAZNOX基电阻随机存取存储器件中的通过相转变高度可靠的切换

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Sung Pyo Park; Doo Hyun Yoon; Young Jun Tak; Heesoo Lee; Hyun Jae Kim;
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年度 2015
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2. Highly stable, solution-processed quaternary oxide thin film-based resistive switching random access memory devices via global and local stoichiometric manipulation strategy [J] . Nanotechnology . 2020,第24期

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3. Circuit-level simulation of resistive-switching random-access memory cross-point array based on a highly reliable compact model [J] . Min-Hwi Kim, Sungjun Kim, Kyung-Chang Ryoo, Journal of Computational Electronics . 2018,第1期

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4. Resistive Switching Characteristics of Hydrogen Peroxide Surface Oxidized ZnO-based Transparent Resistive Memory Devices [C] . F. M. Simanjuntak, B. Pattanayak, C. C. Lin, Meeting of the Electrochemical Society . 2017

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5. Resistive Switching Random Access Memory (RRAM): Analysis, Modeling, and Characterization Toward Practical Applications [D] . Jiang, Zizhen. 2020

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8. HIGHLY RELIABLE RANDOM ACCESS SEMICONDUCTOR MEMORY FOR THE OBC [R] . C. J. Black 1977

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Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devices

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