Effect of Atomic Layer Depositions (ALD)-Deposited Titanium Oxide (TiO2) Thickness on the Performance of Zr40Cu35Al15Ni10 (ZCAN)/TiO2/Indium (In)-Based Resistive Random Access Memory (RRAM) Structures.

摘要

The effect of titanium oxide (TiO2) thickness on hysteresis behavior in non-volatile, metal-insulator-metal resistive random access memory (RRAM) was investigated using a Zr40Cu35Al15Ni10 (ZCAN) amorphous metal bottom electrode and an indium (In) top electrode. Due to the atomically flat nature of the amorphous ZCAN contact, the switching behavior of very thin metal oxides can be more accurately measured, unlike in aluminum (Al) or titanium (Ti) films, which typically have a surface roughness that is on the same order of magnitude as the dielectric thickness. TiO2 grown by atomic layer depositions (ALD) was used as the dielectric layer and has previously been used with platinum (Pt) electrodes to demonstrate RRAM devices with high on/off ratios. We found that at higher thickness, the ALD TiO2 transforms from an amorphous film to an anatase film, which plays a critical role for the hysteresis and switching characteristics in these devices.