Magnetic Random Access Memory comprising middle oxide layer formed with hetero-method and method of manufacturing the same

摘要

Magnetic random access memory (MRAM) comprises a magnetic tunneling junction (MTJ) layer having sequentially stacked lower magnetic layer (62a), an oxidation preventing layer (62b), a tunneling oxide layer (62c) and an upper magnetic layer (62d), in an unit cell. The MRAM further comprises a transistor. An independent claim is included for manufacturing the MRAM.