首页> 外国专利> METHOD FOR PRODUCING METAL-FREE SINGLE CRYSTALLINE SILICONE NANOWIRE, NANOWIRE PREPARED THEREFROM AND NANO DEVICE COMPRISING THE SAME

METHOD FOR PRODUCING METAL-FREE SINGLE CRYSTALLINE SILICONE NANOWIRE, NANOWIRE PREPARED THEREFROM AND NANO DEVICE COMPRISING THE SAME

机译:制备无金属单晶硅纳米线的方法,由纳米线制备的纳米线和包含纳米线的纳米器件

摘要

A method for manufacturing non-catalytic single-crystal silicone nanowires and a nano device employing the nanowires produced by the same are provided to improve electrical and photonic properties by preventing the inflow of impurities caused by a metal catalyst. A method for manufacturing non-catalytic single-crystal silicone nanowires comprises the following steps of: wet-etching the surface of a silicone substrate(100) to form defect sites; exposing the silicone substrate to deionized water or the air in order to form a oxide layer(200) on the surface of the silicone substrate; and putting the silicone substrate into a furnace and heating the substrate while injecting a nanowire precursor so as to grow silicone nanowires(400) from a silicone nuclear(300) formed inside the oxide layer. The oxide layer contains SiOx(0x2).
机译:提供了一种用于制造非催化单晶硅纳米线的方法和使用由其制备的纳米线的纳米器件,以通过防止由金属催化剂引起的杂质的流入来改善电学和光子性能。一种非催化单晶硅纳米线的制造方法,包括以下步骤:湿法刻蚀硅衬底(100)的表面以形成缺陷部位;将有机硅基材暴露于去离子水或空气中,以在有机硅基材的表面上形成氧化层(200);将硅酮基板放入炉中加热,同时注入纳米线前驱体,以从形成于氧化物层内部的硅酮核(300)生长硅酮纳米线(400)。氧化物层包含SiO x(0 <x <2)。

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