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METHOD FOR PRODUCING METAL-FREE SINGLE CRYSTALLINE SILICONE NANOWIRE, NANOWIRE PREPARED THEREFROM AND NANO DEVICE COMPRISING THE SAME
METHOD FOR PRODUCING METAL-FREE SINGLE CRYSTALLINE SILICONE NANOWIRE, NANOWIRE PREPARED THEREFROM AND NANO DEVICE COMPRISING THE SAME
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机译:制备无金属单晶硅纳米线的方法,由纳米线制备的纳米线和包含纳米线的纳米器件
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摘要
A method for manufacturing non-catalytic single-crystal silicone nanowires and a nano device employing the nanowires produced by the same are provided to improve electrical and photonic properties by preventing the inflow of impurities caused by a metal catalyst. A method for manufacturing non-catalytic single-crystal silicone nanowires comprises the following steps of: wet-etching the surface of a silicone substrate(100) to form defect sites; exposing the silicone substrate to deionized water or the air in order to form a oxide layer(200) on the surface of the silicone substrate; and putting the silicone substrate into a furnace and heating the substrate while injecting a nanowire precursor so as to grow silicone nanowires(400) from a silicone nuclear(300) formed inside the oxide layer. The oxide layer contains SiOx(0x2).
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