Single-Crystalline InGaAs Nanowires for Room-Temperature High-Performance Near-Infrared Photodetectors

摘要

In Ga As is an important bandgap-variable ternary semiconductor which has wide applications in electronics and optoelectronics. In this work, single-crystal In Ga As nanowires were synthesized by a chemical vapor deposition method.Photoluminescence measurements indicate the In Ga As nanowires have strong light emission in near-infrared region. For the first time, photodetector based on as-grown In Ga As nanowires was also constructed. It shows good light response over a broad spectral range in infrared region with responsivity of 6.5×10~3 AW^(-1) and external quantum efficiency of 5.04×10~5%. This photodetector may have potential applications in integrated optoelectronic devices and systems.