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PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV)
PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV)
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机译:贯穿硅通孔(TSV)的铜到芯片,芯片到晶片和晶片到晶片互连的电沉积工艺
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摘要
A process of electrodepositing high purity copper in a via in a silicon substrate to form a through-silicon-via (TSV), including immersing the silicon substrate into an electrolytic bath in an electrolytic copper plating system in which the electrolytic bath includes an acid, a source of copper ions, a source of ferrous and/or ferric ions, and at least one additive for controlling physical-mechanical properties of deposited copper; and applying an electrical voltage for a time sufficient to electrodeposit high purity copper to form a TSV, in which a Fe+2/Fe+3 redox system is established in the bath to provide additional copper ions to be electrodeposited by dissolving copper ions from a source of copper metal.
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机译:在硅基板中的通孔中电沉积高纯度铜以形成硅通孔(TSV)的过程,包括将硅基板浸入电解铜电镀系统中的电解浴中,其中电解浴中包含酸,铜离子源,亚铁和/或铁离子源,以及至少一种用于控制沉积铜的物理机械性能的添加剂;施加足以使高纯度铜电沉积以形成TSV的时间,其中在熔池中建立了Fe + 2 / Fe + 3氧化还原系统,以通过溶解铜离子来提供额外的铜离子以进行电沉积。铜金属的来源。
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