Fabrication method of nanowires containing nanoparticles and nonvolatile memory devices utilizing the same

摘要

PURPOSE: Methods for manufacturing nano-wires including nano-particles and nonvolatile memory devices using the same are provided to adjust the size of the nano-particles by controlling the intensity of electronic beam. CONSTITUTION: The raw material solution of metal nano-particles is mixed to the raw material solution of inorganic nano-wires(S1). The mixture is electro-spinned in order to form nano-wires(S2). A thermal treatment is performed to form metal oxide nano-particles in the nano-wires(S3). Electronic beam is injected into the nano-wires in order to form the metal nano-particles(S4).