Effects of CdSe shell layer on the electrical properties of nonvolatile memory devices fabricated utilizing core-shell CdTe-CdSe nanoparticles embedded in a poly(9-vinylcarbazole) layer

摘要

Nonvolatile memory devices were fabricated with core-shell CdTe-CdSe nanoparticles embedded inna polyu00019-vinylcarbazoleu0002u0001PVKu0002 layer to investigate the variations in the electrical properties due tona CdSe shell layer. Capacitance-voltage measurements on Al/CdTe nanoparticles embedded in PVKnlayer/p-Si devices and on Al/core-shell CdTe-CdSe nanoparticles embedded in PVK layer/p-Sindevices at 300 K showed hysteresis behaviors with a flatband voltage shift due to the existence ofnthe CdTe and the CdTe-CdSe nanoparticles. Capacitance-time measurements showed that thenretention time for devices fabricated utilizing core-shell CdTe-CdSe nanoparticles was larger thannthat for devices fabricated utilizing CdTe nanoparticles. © 2010 American Institute of Physics.nu0003doi:10.1063/1.3360215