PURPOSE: The register/erasing performance and data preservation quality are improved at the same time through the nonvolatile memory in which the charge trap type non-volatile memory device chooses the trench structure. CONSTITUTION: The first tunneling insulating layer(32) is formed on the trench channel less than 3 nm into the silicon nitride film of the thickness. The second tunneling insulating layer(33) has the conduction band energy higher than the first tunneling insulating layer on the first tunneling insulating layer. The third tunneling insulating layer(34) is formed on the second tunneling insulating layer less than 4 nm into the silicon nitride film of the thickness.
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