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Nonvolatile Memory Devices Having Charge-Trap Layers Therein with Relatively High Election Affinity
Nonvolatile Memory Devices Having Charge-Trap Layers Therein with Relatively High Election Affinity
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机译:在其中具有相对较高的选举亲和力电荷陷阱层的非易失性存储设备
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摘要
Provided is a nonvolatile memory device. The nonvolatile memory device may include a tunnel insulating layer on a semiconductor substrate; a charge trap layer disposed on the tunnel insulating layer and having an electron affinity greater than a silicon nitride layer; a barrier insulating layer on the charge trap layer; a blocking insulating layer on the barrier insulating layer; and a gate electrode on the blocking insulating layer. An electron affinity of the barrier insulating layer is smaller than an electron affinity of the blocking insulating layer.
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