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METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER
METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER
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机译:制造基于氮化镓的半导体激光器的方法
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摘要
PROBLEM TO BE SOLVED: To provide a method of manufacturing a gallium nitride-based semiconductor laser having excellent cleavage planes, using a GaN wafer having a semipolar plane.;SOLUTION: Marking-off lines 51a are formed on an edge part EDGE1. In the edge part EDGE1, a top surface and a side surface form an acute angle. The marking-off lines 51a extend along a reference line LINE extending in the orthogonal direction to an m-axis. The marking-off lines 51a include grooves extending along the reference line LINE. The marking-off lines 51a are not formed on an edge part EDGE2. In the edge part EDGE2, a top surface and a side surface form an obtuse angle. The marking-off lines 51a are formed with a laser marking device, or the marking-off lines 51a are formed with a marking device using a marking needle or a diamond needle.;COPYRIGHT: (C)2012,JPO&INPIT
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