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Gallium nitride-based semiconductor laser device, and method of manufacturing a gallium nitride-based semiconductor laser element
Gallium nitride-based semiconductor laser device, and method of manufacturing a gallium nitride-based semiconductor laser element
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机译:氮化镓基半导体激光器件以及制造氮化镓基半导体激光元件的方法
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摘要
Provided are a gallium nitride-based semiconductor laser device with reduced threshold current and a method for fabricating the gallium nitride-based semiconductor laser device. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer 15b, an n-side light guide layer 29, an active layer 27, a p-side light guide layer 31, and a p-type cladding layer 23. A lasing wavelength of the active layer 27 is not less than 400 nm and not more than 550 nm. The n-type cladding layer 15b is In x Al y Ga 1-x-y N (0 x 0.05 and 0 y 0.20) and the p-type cladding layer 23 is In x Al y Ga 1-x-y N (0 ‰¤ x 0.05 and 0 y 0.20). The n-side light guide layer 29 and the p-side light guide layer 31 both contain indium. Each of indium compositions of the n-side light guide layer 29 and the p-side light guide layer 31 is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer 15b is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer 15b and a film thickness of the p-type cladding layer 23.
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机译:提供具有减小的阈值电流的基于氮化镓的半导体激光器器件以及用于制造基于氮化镓的半导体激光器器件的方法。氮化镓基半导体激光装置具备n型包覆层15b,n侧导光层29,活性层27,p侧导光层31以及p型包覆层23。有源层27的激光发射波长不小于400nm且不大于550nm。 n型包覆层15b为In x Al y Ga 1-xy N(0 展开▼