METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED SEMICONDUCTOR LAYER, GALLIUM NITRIDE-BASED SEMICONDUCTOR LAYER, AND GALLIUM NITRIDE-BASED SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a GaN-based semiconductor layer capable of enhancing an activation rate of an acceptor.;SOLUTION: Molecular ions including an impurity element to be an acceptor are implanted to at least a part of a region of a gallium nitride-based semiconductor layer 13. The gallium nitride-based semiconductor layer 13 is annealed so as to activate the impurity element. By altering conventional implantation of single atom ions to implantation of molecular ions, agglomeration of the impurity element is suppressed, and an activation rate of the acceptor can be enhanced.;COPYRIGHT: (C)2015,JPO&INPIT