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机译:具有NN / GaN多核层的基于氮化物的金属半导体金属光电探测器
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.;
rnDepartment of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.;
rnDepartment of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.;
rnDepartment of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.;
rnDepartment of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.;
机译:通过使用多个Mg_xN_y / GaN成核层减少氮化物基肖特基二极管的位错
机译:具有多个GaN-SiN成核层的基于氮化物的MQW LED
机译:具有低温GaN覆盖层和ITO金属触点的GaN金属-半导体-金属光电探测器
机译:具有氧化cap盖层的InGaN / GaN金属-半导体-金属光电探测器
机译:氮化镓基和高速金属-半导体-金属光电探测器:集成生长和器件结构。
机译:GaN / AlGaN /溅射AlN成核层对GaN基紫外发光二极管性能的影响
机译:通过插入超薄界面HfO2层来增强GaN金属-半导体-金属紫外光电探测器的性能