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机译:通过使用多个Mg_xN_y / GaN成核层减少氮化物基肖特基二极管的位错
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan, ROC;
Department of Electrical Engineering, Kun Shan University, Tainan Hsien 71003, Taiwan, ROC;
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan, ROC;
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan, ROC Department of Electrical Engineering, Kun Shan University, Tainan Hsien 71003, Taiwan, ROC;
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan, ROC;
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan, ROC;
Department of Optics and Photonics, National Central University, Jhongli, Taoyuan 32001, Taiwan, ROC;
nitrides; schottky diodes; Mg_xN_y/GaN; nucleation layers; atomic force microscopy; secondary-ion mass spectroscopy; x-ray diffraction; electrical properties and measurements;
机译:具有多个Mg_xN_y / GaN缓冲层的氮化物基蓝色发光二极管
机译:通过金属有机化学气相沉积减少具有多个Mg_xN_y / GaN缓冲层的GaN中的位错
机译:具有多个Mg_xN_y / GaN层的AlGaN / GaN二维电子气肖特基势垒光电二极管
机译:具有低位错密度漂移层的硅衬底上的高性能准垂直GaN肖特基势垒二极管
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:GaN / AlGaN /溅射AlN成核层对GaN基紫外发光二极管性能的影响
机译:GaN衬底位错降低的氮化物成核层的纳米结构工程。