非对称面电极硅基锗金属-半导体-金属光电探测器的设计

摘要

We have proposed a design of silicon based germanium metal-semiconductor-metal (MSM) photodetectors with asymmetric area electrodes based upon its dark current suppression mechanism. The influence of electrode structure on the dark current are simulated using ATLAS software. And the dark current of the samples is reduced to µA scale in experiment. Effective dark current suppression and performance improvement in silicon based germanium MSM photodetectors are then demonstrated.%针对金属-半导体-金属(MSM)光电探测器暗电流抑制的机理，本文提出了一种具有非对称面电极结构的硅基锗MSM光电探测器的设计方法，利用ATLAS仿真软件分析了电极结构参数对暗电流的影响，并通过实验得出样品器件的暗电流降低至微安量级。实验结果表明，采用非对称面电极结构设计可以有效抑制硅基锗MSM光电探测器的暗电流，提高器件性能。