Sodium doping method and system for shaped CIGS/CIS based thin film solar cells

摘要

A method of sodium doping in fabricating CIGS/CIS based thin film solar cells includes providing a shaped substrate member. The method includes forming a barrier layer over the surface region followed by a first electrode layer, and then a sodium bearing layer. A precursor layer of copper, indium, and/or gallium materials having an atomic ratio of copper/group III species no greater than 1.0 is deposited over the sodium bearing layer. The method further includes transferring the shaped substrate member to a second chamber and subjecting it to a thermal treatment process within an environment comprising gas-phase selenium species, followed by an environment comprising gas-phase sulfur species with the selenium species being substantially removed to form an absorber layer.