Session Reference: 3BV.5.18 CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells 11.7-Efficient CIGS-Based Solar Cells Prepared Directly from Electrodeposited Precursor Films

摘要

Previously, we reported 15.4%-efficient [R. N. Bhattacharya et. al., Thin-Film Culn1_xGaxSe2 photovoltaic cells from solution-based precursor layers, Appl. Phys. Lett., 75 (1999) 1431-1433] copper indium gallium diselenide (CIGS)-based photovoltaic devices from electrodeposited precursor films, in which the final film composition was adjusted using the physical vapor deposition (PVD) method. At present, we are fabricating CIGS-based solar cells directly from electrodeposited precursor films, eliminating the expensive PVD step. Electrodeposited CIGS absorber layers are fabricated from a stacked Cu/ln/Ga layers. All films are electrodeposited from an aqueous-based solution at room temperature in a two-electrode cell configuration, with platinum gauze as the counter electrode and a Mo/glass substrate as the working electrode. The electrodeposited films are selenized at high temperature (550°±10°C) to obtain 11.7%-efficient device.