Extrinsic doping effect in the fabrication of CIGS and CIGSS thin film solar cells

摘要

This paper describes the effect of Cd and Zn impurities in the formation of photovoltaic junctions using CuInSe_2-based alloy thin-film absorbers. We compare the properties of solar cells fabricated by using CdS window layers with those obtained by Cd or Zn treatment from the liquid or vapor-phase environments. Efficient solar cells are obtained for the latter two cases, and their properties are comparable to those with CdS window layers. The results are interpreted in terms of the ability of Cd and Zn to produce n-type doping in the surface region of the absorbers.