首页>
外国专利>
Semiconductor device with dynamical avalanche breakdown characteristics and method for manufacturing a semiconductor device
Semiconductor device with dynamical avalanche breakdown characteristics and method for manufacturing a semiconductor device
展开▼
机译:具有动态雪崩击穿特性的半导体器件及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor device includes a semiconductor substrate having at least a pn-junction arranged in the semiconductor substrate. At least a field electrode is arranged at least next to a portion of the pn-junction, wherein the field electrode is insulated from the semiconductor substrate. A switching device is electrically connected to the field electrode and adapted to apply selectively and dynamically one of a first electrical potential and a second electrical potential, which is different to the first electrical potential, to the field electrode to alter the avalanche breakdown characteristics of the pn-junction.
展开▼