Power semiconductor device with improved avalanche characteristics and method of manufacturing the same

摘要

A power semiconductor device having improved avalanche characteristics and a method of manufacturing the same are disclosed. The power semiconductor device includes a first conductive type drain region formed in a first conductive type semiconductor substrate, a second conductive type base region formed in the drain region, a first conductive type source region formed in the base region, A gate electrode formed on a semiconductor substrate via a gate insulating film; and a second conductivity type impurity which is formed in the base region and is composed of a first region surrounding the bottom surface of the source region and a second region formed to be self- .