Method of manufacturing semiconductor device for improving contact hole filling characteristics while reducing parasitic capacitance of inter-metal dielectric Method of manufacturing semiconductor device for improving contact hole filling characteristics while reducing parasitic capacitance of inter-metal dielectric Method of manufacturing semiconductor device for improving contact hole filling characteristics while reducing parasitic capacitance of inter-metal dielectric Method of manufacturing semiconductor device for improving contact hole filling characteristics while reducing p

摘要

In manufacturing a semiconductor device, a metal film is formed on a semiconductor substrate, and a high-temperature amorphous carbon film pattern for defining a wiring forming area is formed on the metal film. The metal film is etched by using the high-temperature amorphous carbon film pattern as an etching barrier to form a metal wiring. A low-temperature amorphous carbon film as an IMD is formed on the resultant structure so as to cover the metal wiring including the high-temperature amorphous carbon film pattern. The low-temperature amorphous carbon film and the high-temperature amorphous carbon film pattern are etched to form a contact hole, which has greater width in an upper portion than in a lower portion thereof. Finally, a plug metal film is formed on the low-temperature amorphous carbon film to fill the contact hole.