首页> 外文OA文献 >The Specificity of Solid-phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-welded Contacts to Semiconductor Devices

【2h】

The Specificity of Solid-phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-welded Contacts to Semiconductor Devices

机译：碳化硅固相相互作用的特异性在碳化硅与半导体器件的扩散焊接触点制造中的特异性

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
N. Sleptsuk; O. Korolkov; J. Toompuu; T. Rang; V. Mikli;
展开▼
作者单位

展开▼
年度 2012
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. The Specificity of Solid-phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-welded Contacts to Semiconductor Devices [J] . N. Sleptsuk, O. Korolkov, J. Toompuu, Electronics and Electrical Engineering . 2012,第8期

机译：铝与碳化硅固相相互作用在制造扩散焊接到半导体器件的触点中的特殊性
2. The Specificity of Solid-phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-welded Contacts to Semiconductor Devices [J] . N. Sleptsuk, O. Korolkov, J. Toompuu, Electronics and Electrical Engineering . 2012,第8期

机译：碳化硅与碳化硅固相相互作用在半导体器件的扩散焊接触点制造中的固相相互作用
3. Attainment of high specific hardness and specific modulus in spark plasma sintered aluminium-copper-silicon carbide-titanium carbide hybrid composite [J] . Saha S., Ghosh M., Kumar Pramanick A., Materials Science & Engineering Technology . 2021,第9期

机译：火花等离子体烧结铝 - 铜 - 碳化钛碳化物杂交复合材料中高比硬度和特异性模量
4. Some Comparative Properties of Diffusion-Welded Contacts to 6H and 4H Silicon Carbide [C] . O. Korolkov, T. Rang International Conference on Silicon Carbide and Related Materials 2001 Pt.2 Oct 28-Nov 2, 2001 Tsukuba, Japan . 2001

机译：与6H和4H碳化硅扩散焊接的一些比较特性
5. Performance of devices made of large band-gap semiconductors, silicon carbide and gallium nitride [D] . Okayama, Taizo 2007

机译：大带隙半导体，碳化硅和氮化镓制成的器件的性能
6. Erratum: Polozov I. et al. Fabrication of Silicon Carbide Fiber-Reinforced Silicon Carbide Matrix Composites Using Binder Jetting Additive Manufacturing from Irregularly-Shaped and Spherical Powders. Materials 2020 13 1766 [O] . Igor Polozov, Nikolay Razumov, Dmitriy Masaylo, 2020

机译：错误：PolozovI.等。碳化硅纤维增强碳化硅基质复合材料的制造使用粘合剂喷射添加剂制造不规则形状和球形粉末。材料2020131766
7. Development of Contact Materials for Semiconductor Devices. Silicon Carbide Semiconductors, Devices, and Contact Materials. [O] . Hiroyuki Matsunami, Tsunenobu Kimoto 1994

机译：开发半导体器件的接触材料。碳化硅半导体，装置和接触材料。
8. Continued Development and Characterization of Doped Layers, Contacts andAssociated Electronic Devices in Silicon Carbide [R] . Davis, R. F., Palmour, J. W. 1990

机译：碳化硅中掺杂层，触点和相关电子器件的持续发展和表征

The Specificity of Solid-phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-welded Contacts to Semiconductor Devices

著录项

引文网络

相似文献

相关主题

期刊订阅