DRAM semiconductor device having reduced parasitic capacitance between capacitor contacts and bit line structures and method for manufacturing the same

摘要

A semiconductor device and a method for manufacturing the same are provided. The method includes forming a plurality of bit line structures on a semiconductor substrate, wherein there is a plurality of trenches between the bit line structures. The method also includes forming a first oxide layer conformally covering the bit line structures and the trenches, and forming a photoresist material layer in the trenches and on the first oxide layer, wherein the photoresist material layer has an etch selectivity that is higher than that of the first oxide layer. The method further includes removing the photoresist material layer to form a plurality of capacitor contact holes between the bit line structures, and forming a capacitor contact in the capacitor contact holes.