METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, CAPABLE OF IMPROVING THE ELECTRO-MIGRATION CHARACTERISTIC, THE ZENER VOLTAGE CHARACTERISTIC, AND THE TIME DEPENDENT DIELECTRIC BREAKDOWN CHARACTERISTIC

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to obtain the high reliability and the high performance by depositing a cobalt-based capping layer on a copper-based conductive layer through an electro-less plating method.;CONSTITUTION: A first insulating layer is formed on a semiconductor substrate(100). A groove is formed by selectively etching the first insulating layer. A copper-based conductive layer(400) fills the groove. A cobalt-based capping layer is deposited on the copper-based conductive layer through an electro-less plating method. The first insulating layer and the cobalt-based capping layer are washed using a first basic washing solution.;COPYRIGHT KIPO 2011