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METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE FOR IMPROVING NON-OHMIC CONTACT CHARACTERISTIC AND PREVENTING JUNCTION LEAKAGE CURRENT OF STORAGE NODE AND DETERIORATION OF BREAKDOWN VOLTAGE CHARACTERISTIC
METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE FOR IMPROVING NON-OHMIC CONTACT CHARACTERISTIC AND PREVENTING JUNCTION LEAKAGE CURRENT OF STORAGE NODE AND DETERIORATION OF BREAKDOWN VOLTAGE CHARACTERISTIC